Name: XGSPON 10G ONU BOSA
Brand: DTNT

Product overview

9.95Gbps/10.3125Gbps Tx 1270nm DFB LD/Rx 1577nm integrated WDM filter Pigtail 5 Pin BOSA
The Case is isolator with the GND PIN of APD-TIA
Compliant the with ROHS (Restriction on Hazardous Substance) standard
Compliant the MIL-STD-883E

Transmitter Optical And Electrical Characteristics

(Unless specified else，the specifications below are defined at TC=0-85℃ )

Receiver Optical and Electrical Characteristics

(Unless specified else，the specifications below are defined at TC=0-85℃ )

Structure

Note: mm. tolerance ±0.05mm

Key features

DFB uncooled laser diode
High sensitive APD-TIA
SC/APC Pigtail
Support Industrial temperature

Specifications

ABSOLUTE MAXIMUM RATINGS(Tc=0-85°C unless otherwise noted)7 rows · Absolute maximum ratings

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ABSOLUTE MAXIMUM RATINGS(Tc=0-85°C unless otherwise noted) for XGSPON 10G ONU BOSA
Parameter	Symbol	Min.	Max.	Unit
Storage Temperature	Tstg	-40	85	℃
Operating Case Temperature	Top	0	85	℃
Reverse Voltage(LD)	VRL	—	2	V
Reverse Voltage(MPD)	VRD	—	15	V
Photodiode Forward Current(MPD)	IFD	—	10	mA
Forward Current(LD)	IFL	—	150	mA
Lead Soldering (Temperature)/(Time)	—	—	260/10	℃/Sec

Transmitter Optical And Electrical Characteristics (Unless specified else，the specifications below are defined at TC=0-85℃ )12 rows · Electrical / optical characteristics

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Transmitter Optical And Electrical Characteristics (Unless specified else，the specifications below are defined at TC=0-85℃ ) for XGSPON 10G ONU BOSA
Parameter	Symbol	Symbol	Min.	Typ.	Max.	Unit	Note
Output Optical Power		Pf	2.8	—	5.0	mW	CW, Iop= Ith+20mA
Threshold Current		Ith	—	8	15	mA	CW,Tc=25℃
Threshold Current	Threshold Current	Ith	—	—	45	mA	CW, Tc=0~85℃
Center Wavelength		λc	1260	1270	1280	nm	CW, Iop=Ith+20mA Tc=0~85℃
Side Mode Suppression Ratio		SMSR △	35	—	—	dB	CW, Pop=Ith+20mA
Spectrum Width (-20dB)		λ	—	—	1.0	nm	CW, Pop=Ith+20mA
Operating Voltage		Vop	—	1.2	1.7	V	CW, Iop=Ith+20mA
Monitor Current		Imon	0.1	—	1.0	mA	DC, Iop=Ith+20mA,
Rise/Fall time		Tr/Tf	—	—	50	ps	20%-80%
Monitor Dark Current		Id	—	—	100	nA	Vrd=5V
PD Capacitance		Ct	—	5	7	pF	Vrd=5V@1MHz
Tracking Error		TE	-1.5	—	1.5	dB	APC, 0℃/+25℃, +25℃/+85℃

Receiver Optical and Electrical Characteristics(Unless specified else，the specifications below are defined at TC=0-85℃ )12 rows · Electrical / optical characteristics

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Receiver Optical and Electrical Characteristics(Unless specified else，the specifications below are defined at TC=0-85℃ ) for XGSPON 10G ONU BOSA
Parameter	Symbol	Min.	Typ.	Max.	Unit	Condition
Operating Wavelength	λ	1575	1577	1580	nm	—
Supply Voltage	Vcc	3.0	3.3	3.6	V	—
TIA Supply Current	Icc	—	27	45	mA	Vcc=3.3V
Sensitivity	Sen	—	—	-30	dBm	λ=1577nm , 9.95Gbps/10.3125Gbps PRBS=2^31-1, ER≥6dB,BER≤10-3, Vbr-3V，CW
Breakdown voltage	Vbr	25	33	45	V	I=10uA
Overload Power	Pol	-7	—	—	dBm	λ=1577nm , 9.95Gbps/10.3125Gbps PRBS=2^31-1, ER≥6dB,BER≤10-3, Vbr-3V，CW
Optical Return Loss	ORL	—	—	-20	dB	λ=1577nm
Optical Crosstalk From Internal Laser	Xopt	—	—	-40	dB	1270nm/1570nm
Dark Current	ld	—	—	100	nA	TC =25℃
Rx filter specification@1260~1560nm	Isolation	35	—	—	dB	1260~1560nm
Rx filter specification@1595~1660nm	Isolation	35	—	—	dB	1595~1660nm
Rx filter specification@1575~1580nm	Isolation	—	—	0.35	dB	1575~1580nm

Custom engineering

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