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Combo

COMBO PON ONU

Item No.: 123
The BOSA is used for Combo PON ONU (GPON+XGS PON ONU).The transmitter of this product integrates two high-speed DFB laser diodes with a wavelength of 1310nm and a working rate of 1.25Gb/s and a high-speed DFB laser diode with a wavelength of 1270nm and
Description

Descriptions

- The transmitter of this product integrates two high-speed DFB laser diodes with a wavelength of 1310nm and a working rate of 1.25Gb/s and a high-speed DFB laser diode with a wavelength of 1270nm and a working rate of 10Gb/s.
-The BOSA is used for Combo PON ONU (GPON+XGS PON ONU).
- The transmitting end adopts DFB laser, and the receiving end adopts APD-TIA diode.
- Chip information:                          
                         LD: 1310nm 1.25G/s DFB and 1270nm 10G/s EML                            
                         PT: 2.5G APD-TIA and 10G APD-TIA


Features 

- 1310nm 1.25G Transmitter with DFB laser diode
- 1270nm 10G Transmitter with DFB laser diode
- 1490nm 2.5G Receiver with APD TIA
- 1577nm 10G Receiver with APD TIA
- High output power
- Support SC/APC or SC/UPC Pigtail
- Support Industrial temperature (-40~85C)
- ROHS Compliant Products Available


Application

The BOSA is used for Combo PON ONU (GPON+XGS PON ONU)

Standard

- Comply with Telcordia GR-468 reliability test standard
- Comply with 6 RoHS standards
- Comply with ROHS (Restriction of Hazardous Substances) standard
- Comply with GR-326 connector qualification standard

 

I. Main  Optical - Electric and environmental parameters: 
    
i.  Absolute Maximum Ratings(Tc=25℃ , unless otherwise noted)
ParameterSymbMin.Max.Unit
Storage TemperatureTstg-4085
Operating Case TemperatureTop-4085
APD Damage Power-------3dBm
Hand Lead Soldering (Temperature)/(Time)------260/10℃/Sec
 

II.Transmitter Optical And Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
ParameterSymbolMin.Typ.Max.UnitNote
10G Trasmitter
Transmitter Signal Rate------9.95G---Gbps---
 
Threshold Current
 
Ith
---915mA25°C
------42mA 
LD ForwardVoltageVf------1.8VCW, Iop=Ith+20mA
Centerwavelengthλc126012701280nmIop=Ith+20mA
SideMode
SuppressionRatio
SMSR30------dBIop=Ith+20mA
Output PowerP02.6------mW25℃ , Iop=Ith+20mA
Slope EfficiencySE0.14------mW/mA25℃, Iop=Ith+20mA
Monitor CurrentImon100---1000uAIop=Ith+20mA
Monitor Dark CurrentId------100nAVr=1V
 
Tracking Error
 
TE
 
-1.5
 
---
 
1.5
 
dB
10log(Pf@Tc)/Pf@2
5°C)),CW,
Imon=constant@25°C,
 
1.25G Trasmitter
Center Wavelengthλ129013101330nmIop=Ith+20mA
Transmitter Bit Rate------1.244---Gbps 
 
Threshold Current
 
Ith
---915mA25°C
------45mA 
Output PowerPo1.4  mWIop=Ith+20mA, 25℃
Slope efficiencySE0.07  mW/mACW, Iop=Ith+20mA, 25℃
Side Mode SuppressionSMSR30------dBIop=Ith+20mA
Spectral Width((-20dB)Δλ---0.21.0nmIop=Ith+20mA
Monitor Current (PD)Im100---1000uACW, If=Ith+20mA
LD Forward VoltageVf------1.8VCW, If=Ith+20mA
Monitor Dark CurrentId------100nAVr=1V
 
Tracking Error
 
TE
 
-1.5
 
---
 
1.5
 
dB
If=Ith+20mA,  


III、 Receiver Optical and Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
ParameterSymbolMin.Typ.Max.UnitCondition
10G Receiver
Operating Wavelengthλ157515771580nm 
Rx Rate------9.95---Gbps 
SensitivitySen-------30.5dBm 
9.95G, PRBS 231-1,  BER10-3, ER=6dB,
Vop=Vbr-3V BOL
Saturation PowerPSA-7------dBm
Break Down VoltageVbr253347VId=10uA With Vcc on
TIA SupplyVoltageVcc3.03.33.6V 
SupplyCurrentIcc253445mA 
Dark CurrentId------100nAVop=Vbr-3,TC=25℃
2.5G Receiver
Operating Wavelengthλ148014901500nm 
Rx Rate------2.488---Gbps 
SensitivitySen-------31dBm2.488Gb/s,λ=1490nm
ER=8dB, BER=10-10         PRBS=2 23-1,VR=Vbr-3
Saturation PowerPSA-7------dBm
Break Down VoltageVbr324755VId=10μA
Dark CurrentId------100nAVop=Vbr-3,TC=25℃
TIA SupplyVoltageVcc3.03.33.6V---
SupplyCurrentIcc253240mA---
Optical Isolation From         External Source (λ         =12601360nm, 1441   1450nm, 15301539nm) 
ISO1
 
25
 
---
 
---
 
dB
 
Optical Isolation From External Source (λ  =14001440nm,  λ  =15401625nm) 
ISO2
 
35
 
---
 
---
 
dB
 
Rx Optical Return loss, λ=1490nmORL     
 


Table4 Transmitter Electro-Optical Characteristics (TC=25°C, CW) For XGPON OLT
 

ItemSymbolTest ConditionMin.Typ.Max.Unit
Laser threshold currentITHTC=25℃   CW-----12mA
Tc=-10℃~85℃,CW  30
Operating voltageVFIop,Top------2V
Laser average output optical powerPfTc=45ºC, CW, Iop=80mA@EA=0v3.5------mW
Tc=-10℃~85℃, CW,Iop=Ith+20mA1.8------mW
Center Wavelength  λCCW, Top157515771580nm
Monitor CurrentIMCW, Tc=-10℃~85℃100---1000uA
Optical Return Loss tolerance ORLTλ= 1577nm-------10dB
The Tracking ErrorΔPf/PfTc=-10℃~85℃,CW, APC
TE=10log(Pf(TC)/Pf(25℃))
-1.5---+1.5dB
 

Table5 Receiver Electro-Optical Characteristics (TC=25°C, Vcc=3.3V) For XGPON OLT
ItemSymbolTest ConditionMin.Typ.Max.Unit
Supply CurrentICC依据TO 选型, 范围会不一样---------mA
Operation WavelengthλTc=-10℃~85℃1260--1280nm
Saturation PowerPSATTc=-10℃~85℃  AC, RL=50Ω, NRZ, 2.5Gbps, PRBS=2^31-1 Extinctionratio:8.2dB BER=10-4,-7------dBm
SensitivitySenTc=-10℃~85℃ AC,
RL=50Ω, NRZ, 2.5Gbps,
PRBS=2^31-1 Extinction
ratio:8.2dB BER=10-4,
λ=1260~1280nm
-30----dBm
Optical Return LossORLλ= 1270nm------20dB
Optical CrosstalkXTALK1577nm Internal TX/1270nm RX------45dB


IV. Structure
Note:    mm.          tolerance ±0.05mm