COMBO PON ONU
Descriptions
- The transmitter of this product integrates two high-speed DFB laser diodes with a wavelength of 1310nm and a working rate of 1.25Gb/s and a high-speed DFB laser diode with a wavelength of 1270nm and a working rate of 10Gb/s.
-The BOSA is used for Combo PON ONU (GPON+XGS PON ONU).
- The transmitting end adopts DFB laser, and the receiving end adopts APD-TIA diode.
- Chip information:
LD: 1310nm 1.25G/s DFB and 1270nm 10G/s EML
PT: 2.5G APD-TIA and 10G APD-TIA
Features
- 1310nm 1.25G Transmitter with DFB laser diode
- 1270nm 10G Transmitter with DFB laser diode
- 1490nm 2.5G Receiver with APD TIA
- 1577nm 10G Receiver with APD TIA
- High output power
- Support SC/APC or SC/UPC Pigtail
- Support Industrial temperature (-40~85C)
- ROHS Compliant Products Available
Application
- The BOSA is used for Combo PON ONU (GPON+XGS PON ONU)
Standard
- Comply with Telcordia GR-468 reliability test standard
- Comply with 6 RoHS standards
- Comply with ROHS (Restriction of Hazardous Substances) standard
- Comply with GR-326 connector qualification standard
I. Main Optical - Electric and environmental parameters:
i. Absolute Maximum Ratings(Tc=25℃ , unless otherwise noted)
Parameter | Symb | Min. | Max. | Unit |
Storage Temperature | Tstg | -40 | 85 | ℃ |
Operating Case Temperature | Top | -40 | 85 | ℃ |
APD Damage Power | --- | --- | -3 | dBm |
Hand Lead Soldering (Temperature)/(Time) | --- | --- | 260/10 | ℃/Sec |
II.Transmitter Optical And Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
Parameter | Symbol | Min. | Typ. | Max. | Unit | Note |
10G Trasmitter | ||||||
Transmitter Signal Rate | --- | --- | 9.95G | --- | Gbps | --- |
Threshold Current | Ith | --- | 9 | 15 | mA | 25°C |
--- | --- | 42 | mA |
LD ForwardVoltage | Vf | --- | --- | 1.8 | V | CW, Iop=Ith+20mA |
Centerwavelength | λc | 1260 | 1270 | 1280 | nm | Iop=Ith+20mA |
SideMode SuppressionRatio | SMSR | 30 | --- | --- | dB | Iop=Ith+20mA |
Output Power | P0 | 2.6 | --- | --- | mW | 25℃ , Iop=Ith+20mA |
Slope Efficiency | SE | 0.14 | --- | --- | mW/mA | 25℃, Iop=Ith+20mA |
Monitor Current | Imon | 100 | --- | 1000 | uA | Iop=Ith+20mA |
Monitor Dark Current | Id | --- | --- | 100 | nA | Vr=1V |
Tracking Error | TE | -1.5 | --- | 1.5 | dB | 10log(Pf@Tc)/Pf@2 5°C)),CW, Imon=constant@25°C, |
1.25G Trasmitter | ||||||
Center Wavelength | λ | 1290 | 1310 | 1330 | nm | Iop=Ith+20mA |
Transmitter Bit Rate | --- | --- | 1.244 | --- | Gbps | |
Threshold Current | Ith | --- | 9 | 15 | mA | 25°C |
--- | --- | 45 | mA | |||
Output Power | Po | 1.4 | mW | Iop=Ith+20mA, 25℃ | ||
Slope efficiency | SE | 0.07 | mW/mA | CW, Iop=Ith+20mA, 25℃ | ||
Side Mode Suppression | SMSR | 30 | --- | --- | dB | Iop=Ith+20mA |
Spectral Width((-20dB) | Δλ | --- | 0.2 | 1.0 | nm | Iop=Ith+20mA |
Monitor Current (PD) | Im | 100 | --- | 1000 | uA | CW, If=Ith+20mA |
LD Forward Voltage | Vf | --- | --- | 1.8 | V | CW, If=Ith+20mA |
Monitor Dark Current | Id | --- | --- | 100 | nA | Vr=1V |
Tracking Error | TE | -1.5 | --- | 1.5 | dB | If=Ith+20mA, |
III、 Receiver Optical and Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition |
10G Receiver | ||||||
Operating Wavelength | λ | 1575 | 1577 | 1580 | nm | |
Rx Rate | --- | --- | 9.95 | --- | Gbps | |
Sensitivity | Sen | --- | --- | -30.5 | dBm | 9.95G, PRBS 231-1, BER≤10-3, ER=6dB, Vop=Vbr-3V, BOL |
Saturation Power | PSA | -7 | --- | --- | dBm | |
Break Down Voltage | Vbr | 25 | 33 | 47 | V | Id=10uA With Vcc on |
TIA SupplyVoltage | Vcc | 3.0 | 3.3 | 3.6 | V | |
SupplyCurrent | Icc | 25 | 34 | 45 | mA | |
Dark Current | Id | --- | --- | 100 | nA | Vop=Vbr-3,TC=25℃ |
2.5G Receiver | ||||||
Operating Wavelength | λ | 1480 | 1490 | 1500 | nm | |
Rx Rate | --- | --- | 2.488 | --- | Gbps | |
Sensitivity | Sen | --- | --- | -31 | dBm | 2.488Gb/s,λ=1490nm ER=8dB, BER=10-10 PRBS=2 23-1,VR=Vbr-3 |
Saturation Power | PSA | -7 | --- | --- | dBm | |
Break Down Voltage | Vbr | 32 | 47 | 55 | V | Id=10μA |
Dark Current | Id | --- | --- | 100 | nA | Vop=Vbr-3,TC=25℃ |
TIA SupplyVoltage | Vcc | 3.0 | 3.3 | 3.6 | V | --- |
SupplyCurrent | Icc | 25 | 32 | 40 | mA | --- |
Optical Isolation From External Source (λ =1260~1360nm, 1441~ 1450nm, 1530~1539nm) | ISO1 | 25 | --- | --- | dB | |
Optical Isolation From External Source (λ =1400~1440nm, λ =1540~1625nm) | ISO2 | 35 | --- | --- | dB | |
Rx Optical Return loss, λ=1490nm | ORL |
Table4 Transmitter Electro-Optical Characteristics (TC=25°C, CW) For XGPON OLT
Item | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Laser threshold current | ITH | TC=25℃ CW | --- | -- | 12 | mA |
Tc=-10℃~85℃,CW | 30 | |||||
Operating voltage | VF | Iop,Top | --- | --- | 2 | V |
Laser average output optical power | Pf | Tc=45ºC, CW, Iop=80mA@EA=0v | 3.5 | --- | --- | mW |
Tc=-10℃~85℃, CW,Iop=Ith+20mA | 1.8 | --- | --- | mW | ||
Center Wavelength | λC | CW, Top | 1575 | 1577 | 1580 | nm |
Monitor Current | IM | CW, Tc=-10℃~85℃ | 100 | --- | 1000 | uA |
Optical Return Loss tolerance | ORLT | λ= 1577nm | --- | --- | -10 | dB |
The Tracking Error | ΔPf/Pf | Tc=-10℃~85℃,CW, APC TE=10log(Pf(TC)/Pf(25℃)) | -1.5 | --- | +1.5 | dB |
Table5 Receiver Electro-Optical Characteristics (TC=25°C, Vcc=3.3V) For XGPON OLT
Item | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Supply Current | ICC | 依据TO 选型, 范围会不一样 | --- | --- | --- | mA |
Operation Wavelength | λ | Tc=-10℃~85℃ | 1260 | -- | 1280 | nm |
Saturation Power | PSAT | Tc=-10℃~85℃ AC, RL=50Ω, NRZ, 2.5Gbps, PRBS=2^31-1 Extinctionratio:8.2dB BER=10-4, | -7 | --- | --- | dBm |
Sensitivity | Sen | Tc=-10℃~85℃ AC, RL=50Ω, NRZ, 2.5Gbps, PRBS=2^31-1 Extinction ratio:8.2dB BER=10-4, λ=1260~1280nm | -30 | -- | -- | dBm |
Optical Return Loss | ORL | λ= 1270nm | -- | --- | -20 | dB |
Optical Crosstalk | XTALK | 1577nm Internal TX/1270nm RX | -- | --- | -45 | dB |
IV. Structure
Note: mm. tolerance ±0.05mm